Characterization of ZnSe Nanolayers by Spectroscopic Ellipsometry
نویسندگان
چکیده
منابع مشابه
Application of spectroscopic ellipsometry and Mueller ellipsometry to optical characterization.
This article provides a brief overview of both established and novel ellipsometry techniques, as well as their applications. Ellipsometry is an indirect optical technique, in that information about the physical properties of a sample is obtained through modeling analysis. Standard ellipsometry is typically used to characterize optically isotropic bulk and/or layered materials. More advanced tec...
متن کاملCharacterization of Nanocrystals Using Spectroscopic Ellipsometry
First applications of ellipsometry to the measurement of polyand nanocrystalline thin films date back to many decades. The most significant step towards the ellipsometric investigation of composite thin films was the realization of the first spectroscopic ellipsometers in the ’70s [3, 4, 8], which allowed the measurement of the dielectric function, the imaginary part of which is directly relate...
متن کاملSpectroscopic ellipsometry study
The dielectric functions of InP, IIla.53 Gao.47 As, and 1110.75 Gao.2S Aso.s P 0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to inves...
متن کاملNon-destructive Characterization of Nitrogen-implanted Silicon-on- insulator Structures by Spectroscopic Ellipsometry*
1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N ÷ ions at a dose of 7.5×1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed by the conventional method of using appropriate optical models" and linear regression analysis. We ap...
متن کاملInvestigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry
We have investigated SiC/oxide interface structures by the use of spectroscopic ellipsometry. The depth profile of the optical constants of thermally grown oxide layers on SiC was obtained by observing the slope-shaped oxide layers, and the results suggest the existence of the interface layers, around 1 nm in thickness, having high refractive index than those of both SiC and SiO2. The wavelengt...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2009
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.116.708